||Integrated Antennas with Active Circuits for integrated THz Receivers
||Krozer, Viktor (Electromagnetic Systems, Ørsted DTU, Technical University of Denmark, DTU, DK-2800 Kgs. Lyngby, Denmark)
||Technical University of Denmark, DTU, DK-2800 Kgs. Lyngby, Denmark
||Abstract This thesis focuses on the development of physical numerical and analytical models for Schottky diodes at THz frequencies. The model is utilized in the implementation of integrated antennas to characterize the diode impedance in the operating frequency range and to achieve impedance matching between the antenna and the active device. The availability of the model up to frequencies around 3 THz requires a detailed consideration of the skin effect and plasma resonance in the semiconductor. These e®ects are included in the simulation of frequency multipliers in the frequency range between 1-3 THz: using the developed model, the performances of commercial diodes are analyzed and the obtained results are compared with results from papers. An analytical Schottky diode device model is then implemented in a C code and used into ADS environment. The obtained results show improved output power in frequency multipliers which employ diodes with optimized geometrical characteristics: Pout=0.251mW is achieved at 2.7THz. The simulations run allow to evaluate the device and circuital characteristics of frequency multipliers in the frequency range between 500GHz and 2.7THz.
||Schottky diode, THz
Creation date: 2006-06-22
Update date: 2007-02-24